Image sensor, method for manufacturing the same, and image processing device having the image sensor

ABSTRACT

An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.15/233,383, filed Aug. 10, 2016, which is a continuation of U.S.application Ser. No. 15/004,494, filed Jan. 22, 2016, which is acontinuation of U.S. application Ser. No. 14/310,305, filed Jun. 20,2014, now U.S. Pat. No. 9,287,327, which claims the benefit of KoreanPatent Application No. 10-2013-0071589, filed on Jun. 21, 2013, in theKorean Intellectual Property Office, the disclosure of which isincorporated by reference herein.

TECHNICAL FIELD

Embodiments of the present inventive concept relate to an image sensor,and more particularly to an image sensor for generating ahigh-resolution image in which a pixel is in effect decreased in sizewithout a decrease in the physical size of the pixel, a method formanufacturing the same, and an image processing device having the imagesensor.

DISCUSSION OF RELATED ART

To increase the resolution of a CMOS image sensor of a given size, thenumber of pixels included in an active pixel array need to be increasedand the physical size of each pixel need to be decreased, so that morepixels can fit in a given light receiving area.

As the pixel decreases in size, a photo-electronic conversion element,e.g., a photo diode, included in the pixel also decreases in size, andit may be difficult to embody circuitry for reading an output signal ofthe photo-electronic conversion element.

SUMMARY

According to an embodiment of the present inventive concept, an imagesensor is provided, comprising: a first layer having a plurality ofgroups of photodiodes formed in a semiconductor substrate, each grouprepresenting a 2×2 array of photodiodes, with 2 first photodiodesconfigured to detect light of a first wavelength and 2 secondphotodiodes configured to detect light of a second wavelength, eachfirst photodiode positioned adjacent to the second photodiodes; and asecond layer overlapping the first layer, the second layer is organic,having a plurality of organic photodiodes configured to detect light ofa third wavelength, each organic photodiode positioned to partiallyoverlap 2 first photodiodes and 2 second photodiodes of the first layer.According to an embodiment, the area of overlap of each of the partiallyoverlapped first photodiodes and second photodiodes is substantially thesame.

According to an embodiment of the present inventive concept, the imagesensor further includes a circuit part configured to read the detectedlight from the first and second photodiodes of the first layer, thecircuit part positioned relative to the semiconductor substrate forfront side illumination, wherein the circuit part is positioned betweenthe first layer and the second layer. The image sensor further includinga color filter positioned between the first layer and the second layer.

According to an embodiment of the present inventive concept, the imagesensor may further include a circuit part configured to read thedetected light of the first layer, the circuit part positioned relativeto the semiconductor substrate for back side illumination.

According to an embodiment of the present inventive concept, the imagesensor may further include a floating diffusion region formed adjacentto each photo diode on the semiconductor substrate, each floatingdiffusion region is shared by an organic photo diode.

The image sensor may further include a first readout circuit configuredto read the light detected by each photo diode on the semiconductorsubstrate and a second readout circuit configured to read the lightdetected by each organic photo diode.

According to an embodiment of the present inventive concept, an imagesensor is provided, comprising: a first layer having a plurality offirst photodiodes and a plurality of second photodiodes formed on asemiconductor substrate, the first photodiodes configured to detectlight of a first wavelength and the second photodiodes configured todetect light of a second wavelength, wherein the first photodiodes andthe second photodiodes are alternately positioned with each of the firstphotodiodes positioned adjacent to a second photodiode and vice versa;and a second layer overlapping the first layer, the second layer isorganic, having a plurality of organic photodiodes configured to detectlight of a third wavelength, wherein the organic photodiodes are skewedwith respect to alignment with the first photodiodes and the secondphotodiodes when viewed perpendicularly to the semiconductor substrate,wherein the light of the third wavelength is green.

According to an embodiment of the present inventive concept, a pluralityof storage regions is formed in the semiconductor substrate, each of thestorage regions corresponding to a photodiode configured to storeelectrical charges transmitted through a corresponding metallic contact.

According to an embodiment of the present inventive concept, the skew inalignment between the organic photodiodes and the first and second photopixels is about 50% in width and length of a photodiode.

The image sensor may further include a circuit part configured to readthe detected light of the first layer, the circuit part positionedrelative to the semiconductor substrate for front side illumination, andmay further include a color filter positioned between the first layerand the second layer.

According to an embodiment of the present inventive concept, the imagesensor may include a circuit part configured to read the detected lightof the first layer, the circuit part positioned relative to thesemiconductor substrate for back side illumination.

According to an embodiment of the present inventive concept, the numberof photodiodes on the semiconductor substrate is the same as the numberof organic photodiodes on the second layer.

According to an embodiment of the present inventive concept, a method offorming an image sensor is provided, comprising: forming a first layerhaving a plurality of first photodiodes and a plurality of secondphotodiodes on a semiconductor substrate, the first photodiodesconfigured to detect light of a first wavelength and the secondphotodiodes configured to detect light of a second wavelength includingpositioning the first photodiodes and the second photodiodes alternatelywith each of the first photodiodes positioned adjacent to a secondphotodiode and vice versa; and forming a second layer overlapping thefirst layer, the second layer is organic, having a plurality of organicphotodiodes configured to detect light of a third wavelength, whereinthe organic photodiodes are skewed with respect to alignment with thefirst photodiodes and the second photodiodes when viewed perpendicularlyto the semiconductor substrate.

The method may further include positioning the semiconductor substratein between a circuit part configured to read the detected light of thefirst layer and the second layer.

The method may include forming color filters over the semiconductorsubstrate; and forming photo-electric conversion regions of the organicmaterial on pixel electrodes. According to an embodiment of the presentinventive concept, a method of processing image detection datacomprising each pixel having four overlapped sections, each sectionhaving overlapped one pixel on the first layer and one pixel on thesecond layer, with data detected represented by G=GS/4; B=B1S/4; andR=avg(R2S/4+R1S/4). According to an embodiment of the present inventiveconcept, a portable electronic device is provided, comprising: an imageprocessing device; an optical lens; a digital signal processor; adisplay; and an image sensor, comprising a first layer having aplurality of first photodiodes and a plurality of second photodiodesformed on a semiconductor substrate, the first photodiodes configured todetect light of a first wavelength and the second photodiodes configuredto detect light of a second wavelength, wherein the first photodiodesand the second photodiodes are alternately positioned with each of thefirst photodiodes positioned adjacent to a second photodiode and viceversa; and a second layer overlapping the first layer, the second layeris organic, having a plurality of organic photodiodes configured todetect light of a third wavelength, wherein the organic photodiodes areskewed with respect to alignment with the first photodiodes and thesecond photodiodes when viewed perpendicularly to the semiconductorsubstrate.

The portable electronic device may further include a wirelesstransceiver configured to transmit and receive signals wirelessly.

The portable electronic device may further include a memory wherein thememory is a DRAM or a NAND flash memory.

According to an embodiment of the present inventive concept, theportable electronic device may be embodied in one of a digital camera, acamcorder, a mobile phone, a smart phone, or a tablet personal computer(PC).

BRIEF DESCRIPTION OF THE DRAWINGS

Illustrative, non-limiting example embodiments will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings.

FIG. 1 shows a structure of an image sensor according to an exampleembodiment of the present inventive concept;

FIGS. 2 to 4 depict embodiments of an image sensor including a greenpixel disposed to overlap other pixels;

FIG. 5 is a cross-sectional view of the image sensor of FIG. 2 takenalong line V-V′, embodied in a frontside illumination (FSI) manner;

FIG. 6 is a top view of a green pixel partially overlapped with a redpixel or a blue pixel, according to an embodiment of the presentinventive concept;

FIG. 7 shows a semiconductor substrate and a circuit part of the imagesensor shown in FIG. 5;

FIG. 8 is a cross-sectional view of the image sensor of FIG. 2, takenalong line V-V′, embodied in a backside illumination (BSI) manner;

FIG. 9 is an example embodiment of a readout circuit including a greenpixel and a red pixel;

FIG. 10 is an example embodiment of the readout circuit including agreen pixel and a red pixel;

FIG. 11 is a flow diagram of a method of manufacturing an image sensoraccording to an example embodiment of the present inventive concept;

FIG. 12 is a block view of an image processing device including an imagesensor according to an embodiment of the present inventive concept;

FIG. 13 is a flow diagram showing of an signal processing operation ofimage signals from an image sensor according to an embodiment of thepresent inventive concept; and

FIG. 14 is a block view of a portable electronic device including animage processing device and an image sensor according to an embodimentof the present inventive concept.

DETAILED DESCRIPTION OF EMBODIMENTS

Various example embodiments will be described more fully hereinafterwith reference to the accompanying drawings, in which some exampleembodiments are shown. The present inventive concept may, however, beembodied in many different forms and should not be construed as limitedto the example embodiments set forth herein. In the drawings, the sizesand relative sizes of layers and regions may be exaggerated for clarity.Like numerals refer to like elements throughout.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are used to distinguish oneelement from another. Thus, a first element discussed below could betermed a second element without departing from the teachings of thepresent inventive concept. As used herein, the term “and/or” includesany and all combinations of one or more of the associated listed items.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between,” “adjacent” versus “directlyadjacent,” etc.).

The terminology used herein is for the purpose of describing particularexample embodiments only and is not intended to be limiting of thepresent inventive concept. As used herein, the singular forms “a,” “an”and “the” are intended to include the plural forms as well, unless thecontext clearly indicates otherwise.

It should also be noted that in some alternative implementations, thefunctions/acts noted in the blocks may occur out of the order noted inthe flowcharts. For example, two blocks shown in succession may in factbe executed substantially concurrently or the blocks may sometimes beexecuted in the reverse order, depending upon the functionality/actsinvolved.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this inventive concept belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

FIG. 1 shows a structure of an image sensor according to an exampleembodiment of the present inventive concept;

Referring to FIG. 1, an image sensor 100A, which may be referred to as apixel array, includes a first layer 100BT including a plurality of blueB and red R pixels, and a second layer 100TP including a plurality ofgreen pixels G.

The second layer 100TP and the first layer 100BT are partiallyoverlapped with each other. The first layer 100BT may be referred to asan overlapped plane, and the second layer 100TP may be referred to as anoverlapping plane. As shown, the overlapping of the first and secondlayer is not a direct overlap; rather, the overlapping is skewed so thateach green pixel G overlaps a portion of two blue pixels B and two redpixels R.

Each of the plurality of green pixels G is partially overlapped witheach of n*n pixels among a plurality of E and R pixels, wherein n is anatural number greater than 1. For purposes of illustration, n is 2 inthe present embodiment.

‘R’ indicates a red pixel which may generate an electrical signalcorresponding to red wavelengths (or red color range). ‘B’ indicates ablue pixel which may generate an electrical signal corresponding to bluewavelengths (or blue color range). ‘G’ indicates a green pixel which maygenerate an electrical signal corresponding to green wavelengths (orgreen color range).

FIGS. 2 to 4 depict structures of an image sensor including a greenpixel disposed so as to be partially overlapped with each of the n*npixels.

Referring to FIGS. 1 and 2, an image sensor 100B corresponding to aportion of the image sensor 100A includes 2*2 pixels B1, R1, R2, and B2disposed in the first layer 100BT, and a green pixel G arranged in thesecond layer 100TP.

The plurality of pixels B and R arranged in the first layer 100BT ofFIG. 1 include 2*2 pixels with alternating B and R pixels, for example,B1, R1, R2 and B2. Each of the 2*2 pixels B1, R1, R2, and B2 may bepartially overlapped with the green pixel G. Each of overlapping regions11, 12, 13, and 14 of the green pixel G partially overlapped with eachof the 2*2 pixels B1, R1, R2, and B2.

The sum of the partially overlapped overlapping regions 11, 12, 13, and14 is equal to the size of the green pixel G, with each overlappedportion in B1, R1, R2, and B2 having substantially the same size. Asshown in FIGS. 1 and 2, the skew in the alignment of the green pixel Gwith respect to the pixels B and R is about 50% in width and length ofan overlapped pixel, when viewed perpendicularly to the first layer orthe second layer. In other embodiments, the amount of skew of the greenpixel G layer with the B and R pixel layer may vary to not overlapprecisely equally over the B and R pixels.

In a section (or region) 11 where two pixels G+B1 are overlapped, asignal corresponding to green wavelengths (or a green region of visiblelight) and a signal corresponding to blue wavelengths (or a blue regionof visible light) are generated.

In a section (or region) 12 where two pixels G+R1 are overlapped witheach other, a signal corresponding to green wavelengths and a signalcorresponding to red wavelengths (or a red region of visible light) aregenerated.

In a section (or region) 13 where two pixels G+R2 are overlapped witheach other, a signal corresponding to green wavelengths and a signalcorresponding to red wavelengths are generated.

In a section (or region) 14 where two pixels G+B2 are overlapped, asignal corresponding to green wavelengths and a signal corresponding toblue wavelengths are generated.

Referring to FIGS. 1 and 3, an image sensor 1000 corresponding to aportion of the image sensor 100A, includes a red pixel R disposed in thefirst layer 100BT and 2*2 green pixels G1, G2, G3, and G4 disposed inthe second layer 100TP.

A plurality of green pixels arranged on the second layer 100TP of FIG. 1includes 2*2 green pixels G1, G2, G3, and G4.

A portion of the plurality of green pixels of FIG. 1 may be expressed asthe 2*2 green pixels G1, G2, G3, and G4. Each of the 2*2 green pixelsG1, G2, G3, and G4 and a red pixel R is partially overlapped with eachother.

In a section 21 where two pixels R+G1 are overlapped with each other, asignal corresponding to red wavelengths and a signal corresponding togreen wavelengths are generated.

In a section 22 where two pixels R+G2 are overlapped with each other, asignal corresponding to red wavelengths and a signal corresponding togreen wavelengths are generated.

In a section 23 where two pixels R+G3 are overlapped with each other, asignal corresponding to red wavelengths and a signal corresponding togreen wavelengths are generated.

In a section 24 where two pixels R+G4 are overlapped with each other, asignal corresponding to red wavelengths and a signal corresponding togreen wavelengths are generated.

Referring to FIGS. 1 and 4, an image sensor 100D corresponding to aportion of the image sensor 100A includes a blue pixel B disposed on thefirst layer 100BT and 2*2 green pixels G1, G2, G3, and G4 disposed onthe second layer 100TP.

A plurality of green pixels arranged on the second layer 100TP of FIG. 1includes 2*2 green pixels G1, G2, G3, and G4.

A portion of the plurality of green pixels G of FIG. 1 may be expressedas the 2*2 green pixels G1, G2, G3, and G4. Each of the 2*2 green pixelsG1, G2, G3, and G4 and the blue pixel B are partially overlapped witheach other.

Each overlapping region 31, 32, 33, and 34 of the 2*2 green pixels G1,G2, G3, and G4 are partially overlapped with the blue pixel B.

In a section 31 where two pixels B+G1 are overlapped with each other, asignal corresponding to blue wavelengths and a signal corresponding togreen wavelengths are generated.

In a section 32 where two pixels B+G2 are overlapped with each other, asignal corresponding to blue wavelengths and a signal corresponding togreen wavelengths are generated.

In a section 33 where two pixels B+G3 are overlapped with each other, asignal corresponding to blue wavelengths and a signal corresponding togreen wavelengths are generated.

In a section 34 where two pixels B+G4 are overlapped with each other, asignal corresponding to blue wavelengths and a signal corresponding togreen wavelengths are generated.

The 2*2 pixels as shown and described with reference to FIGS. 1 to 4 areduplicated throughout the first layer 100BT.

FIG. 5 is an embodiment of an image sensor embodied in a frontsideillumination (FSI) manner, shown in a cross-sectional view of the imagesensor of FIG. 2 taken along line V-V′. Referring to FIGS. 1, 2, and 5,a blue photo-electric conversion region 201, a red photo-electricconversion region 202, and a plurality of green storage regions 203,205, and 207 are formed in a semiconductor substrate 200, which may be asilicon substrate.

Each of the plurality of green storage regions 203, 205, and 207accumulates or stores electrical charges transmitted through eachmetallic contact 311, 313, and 315.

A circuit part 300 may be formed on or over the semiconductor substrate200.

Circuitry disposed in the circuit part 300 includes transistors fortransmitting charges accumulated in each region 201, 202, 203, 205, and207 to respective floating diffusion regions FD. The circuit part 300also includes metal interconnects MC connecting each region 201, 202,203, 205, and 207 to a readout circuit.

Color filters 321 and 323 may be formed on or over the circuit part 300.

A blue color filter 321 allows blue wavelengths which have passedthrough pixel electrodes 331 and 333 to pass through the bluephoto-electric conversion region 201.

The blue photo-electric conversion region 201 performs a photo-electricconversion operation based on the blue wavelengths. Pixel electrodes 331and 333, which are separated from each other, are formed on the bluecolor filter 321.

For convenience of description in FIG. 5, it is illustrated that thelength where a blue color filter 321 and a pixel electrode 331 areoverlapped with each other is the same as the length where the bluecolor filter 321 and the pixel electrode 333 are overlapped with eachother; however, according to other embodiments, the amount of overlapbetween the G pixels with the B and R pixels can vary and may not be thesame, depending on the variation in the skew between the layers 100BTand 100TP.

Portions of electrodes 331 and 333 cover corresponding color filter 321,and portions of electrodes 331 and 335 cover corresponding color filter323.

A red color filter 323 allows red wavelengths which have passed throughthe pixel electrodes 331 and 335 to pass through the red photo-electricconversion region 202. The red photo-electric conversion region 202performs a photo-electric conversion operation based on the redwavelengths.

The pixel electrodes 331 and 335 separated from each other are formed onthe red color filter 323.

For convenience of description in FIG. 5, it is illustrated that thelength where a red color filter 323 and a pixel electrode 331 areoverlapped with each other is the same as the length where the red colorfilter 323 and the pixel electrode 335 are overlapped with each other;however, according to other embodiments, the amount of overlap betweenthe G pixels with the B and R pixels can vary and may not be the same,depending on the variation in the skew between the layers 100BT and100TP.

The pixel electrodes 331, 333, and 335 that are formed on color filters321 and 323 are separated from each other.

On each pixel electrode 331, 333, and 335, a photo-electric conversionregion 340 is formed. The photo-electric conversion region 340 is madeof an organic material. The photo-electric conversion region 340performs a photo-electric conversion operation based on greenwavelengths, generates electrical charges, and allows blue wavelengthsand red wavelengths to pass through.

The photo-electric conversion region 340 may include an electrondonating organic material and/or an electron accepting organic material.For example, a first organic layer may be formed on each pixel electrode331, 333, and 335, and a second organic layer may be formed on the firstorganic layer.

When the first organic layer includes an electron donating organicmaterial, the second organic layer may be formed to include an electronaccepting organic material, or vice versa. For example, when the firstorganic layer is embodied from one of a p-type organic material and an-type organic material, e.g., a n-type organic material, the secondorganic layer may be embodied from the other of the p-type organicmaterial and the re-type organic material, e.g., the p-type organicmaterial.

Accordingly, the first organic layer and the second organic layer mayform a hetero p-n junction. Here, the electron donating organic materialis a material which may generate a donor ion in response to light, andthe electron accepting organic material is a material which may generatean acceptor ion in response to the light.

According to another example embodiment, the photo-electronic conversionregion 340 of an organic material may be embodied from an organicmaterial which is a compound (or mixed) of the electron donating organicmaterial and the electron accepting organic material.

Each pixel electrode 331, 333, and 335 collects electrical chargesgenerated based on green wavelengths in the photo-electric conversionregion 340 of an organic material and allows blue wavelengths and redwavelengths to pass through.

Each pixel electrode 331, 333, and 335 may be embodied in a transparentelectrode. For example, each pixel electrode 331, 333, and 335 may beembodied in zinc oxide (ZnO) or Indium tin oxide or tin-doped indiumoxide (ITO). Each pixel electrode 331, 333, and 335 may be embodied in apixel electrode film.

Electrical charges collected by each pixel electrode 331, 333, and 335are transmitted to each green storage region 203, 205, and 207 througheach wiring or each contact plug 311, 313, and 315.

A common electrode 350 is formed on the photo-electric conversion region340 of an organic material. The common electrode 350 supplies a biasvoltage to the photo-electric conversion region 340 of an organicmaterial.

The common electrode 350 may be embodied in a transparent electrode,ZnO, or ITO. The common electrode 350 may be embodied in a pixelelectrode film.

The green pixel G includes the pixel electrode 331, the photo-electricconversion region of an organic material 340, and the common electrode350. The green pixel G may be defined by the pixel electrode 331.

FIG. 6 is a top view of a green pixel and a red pixel which arepartially overlapped with each other, or a top view of a green pixel anda blue pixel which are partially overlapped with each other. In FIG. 6,OPD denotes the photo-electric conversion region 340 of an organicmaterial or a photo diode of an organic material, B_PD denotes a bluephoto-electric conversion region 201 or a photodiode related to (ordefined by) the blue photo-electric conversion region 201, and R_PDdenotes a red photo-electric conversion region 202 or a photo dioderelated to (or defined by) the red photo-electric conversion region 202.

ED denotes a floating diffusion region, and TG1, TG2, TG3, and TG4 eachdenote a transfer transistor or a gate electrode of a transfer gate. RGdenotes a reset transistor or a gate electrode of a reset gate.

For example, a green pixel including OPD and a blue pixel including B_PDmay share the floating diffusion region FD. Moreover, the green pixelincluding OPD and a red pixel including R_PD may share a floatingdiffusion region FD. The floating diffusion region FD may be embodied inthe semiconductor substrate 200, and TG1, TG2, TG3, and TG4 may beembodied in the circuit part 300.

FIG. 7 is a diagram of the semiconductor substrate and the circuit part300 of FIG. 5. As illustrated in FIG. 7, each floating diffusion regioncorresponding to each region 201, 202, 203, 205, and 207 may be formedin the semiconductor substrate 200.

FIG. 8 shows a cross-sectional view of an image sensor embodied in abackside illumination (BSI) manner according to an embodiment of thepresent inventive concept.

Referring to FIGS. 1, 2, and 8, a blue photo-electric conversion region401, a red photo-electric conversion region 402, a plurality of greenstorage regions 406, 407, and 408 are formed in the semiconductorsubstrate 400.

Each of the plurality of green storage regions 406, 407, and 408accumulates or stores electrical charges transmitted through each metalor each contact plug 403, 404, and 405. Each floating diffusion regioncorresponding to each region 401, 402, 406, 407, and 408 may be formedin the semiconductor substrate 400.

A circuit part 410 may be formed under the semiconductor substrate 400.A gate electrode of each transmission transistor may be embodied in thecircuit part 410. The transmission transistor transmits chargesaccumulated in each region 401, 402, 406, 407, and 408 to each floatingdiffusion region. Metal interconnectors MC are embodied in the circuitpart 410 to transmit the charges accumulated in each region 401, 402,406, 407, and 408 to a readout circuit.

Color filters 421 and 423 may be formed on or over the semiconductorsubstrate 400. The color filters 421 and 423 are embodied at an oppositeside of the circuit part 410 based on the semiconductor substrate 400.

A blue color filter 421 allows blue wavelengths which have passedthrough pixel electrodes 431 and 433 to pass through the bluephoto-electric conversion region 401. The blue photo-electric conversionregion 401 performs a photo-electric conversion operation based on theblue wavelengths. The pixel electrodes 431 and 433 which are separatedfrom each other are formed on the blue color filter 421.

For convenience of description in FIG. 8, it is illustrated that thelength where the blue color filter 421 and the pixel electrode 431 areoverlapped with each other is essentially the same length where the bluecolor filter 421 and the pixel electrode 433 are overlapped with eachother; however, the length of overlapping may not be the same in otherexample embodiments.

A red color filter 423 allows red wavelengths which have passed throughpixel electrodes 431 and 435 to pass through a red photo-electricconversion region 402. The red photo-electric conversion region 402performs a photo-electric conversion operation based on the redwavelengths. The pixel electrodes 431 and 435 which are separated fromeach other are formed on the red color filter 423.

For convenience of description in FIG. 8, it is illustrated that thelength where the red color filter 423 and the pixel electrode 431 areoverlapped with each other is essentially the same length where the redcolor filter 423 and the pixel electrode 435 are overlapped with eachother; however, the length of overlapping may not be the same in otherexample embodiments.

Each pixel electrode 431, 433, and 435 is separated from each other. Thepixel electrodes may be formed on color filters 421 and 423. Thephoto-electric conversion region 440 of an organic material may beformed on each pixel electrode 431, 433, and 435.

Each pixel electrode 431, 433, and 435 collects electrical chargesgenerated based on green wavelengths in the photo-electric conversionregion 440 of an organic material, and allows blue wavelengths and redwavelengths to pass through. Each pixel electrode 431, 433, and 435 maybe embodied in a transparent electrode such as ZnO or ITO. Each pixelelectrode 431, 433, and 435 may be embodied in a pixel electrode film.

Electrical charges collected by each pixel electrode 431, 433, and 435are transmitted to each green storage region 406, 407, and 408 througheach wiring or each contact plug 403, 404, and 405.

A common electrode 450 is formed on the photo-electric conversion region440 of an organic material. The common electrode 450 supplies a biasvoltage to the photo-electric conversion region 440 of an organicmaterial. The common electrode 450 may be embodied in a transparentelectrode such as ZnO or ITO. The common electrode 450 may be embodiedin a pixel electrode film.

A green pixel G includes the pixel electrode 431, the photo-electricconversion region 440 of an organic material, and the common electrode450. The green pixel G is defined by the pixel electrode 431.

A configuration of components as illustrated in FIGS. 6 and 7 anddescribed in connection therewith is applicable to an image sensor ofFIG. 8.

FIG. 9 is an example embodiment of a readout circuit including a greenpixel and a red pixel. Referring to FIGS. 5 to 9, OPD and R_PD share onefloating diffusion region FD. Moreover, in another example embodiment,OPD and B_PD share one floating diffusion region FD. The floatingdiffusion region FD may be referred to as a floating diffusion node.

From a pixel viewpoint, a green pixel and a red pixel share one floatingdiffusion region FD.

A readout circuit includes two transmission transistors TG1 and TG2, thefloating diffusion region FD, a reset transistor RX, a drive transistorDX, and a selection transistor SX.

A first transmission transistor TG1 operates in response to a firsttransmission control signal TS1, a second transmission transistor TG2operates in response to a second transmission control signal TS2, thereset transistor RX operates in response to a reset control signal RS,and the selection transistor SX operates in response to a selectionsignal SEL.

When activation time of the first transmission control signal TS1 andactivation time of the second transmission control signal TS2 areadequately controlled, a signal corresponding to electrical chargesgenerated by OPD and a signal corresponding to electrical chargesgenerated by R_PD may be transmitted to a column line COL according toan operation of each transistor DX and SX. Here, OPD, R_PD, or B_PD maybe embodied in a photo transistor, a photo gate, a pinned photo diode(PPD), or a combination of these.

FIG. 10 is another example embodiment of a readout circuit including agreen pixel and a red pixel.

Referring to FIGS. 5, 8, and 10, a first readout circuit which readselectrical charges generated by R_PD (or B_PD) and a second readoutcircuit which reads electrical charges generated by OPD are separatedfrom each other. From a pixel viewpoint, a green pixel and a red pixelare separated from each other. The first readout circuit includes afirst transmission transistor TGA, a first floating diffusion regionFD1, a first reset transistor RX1, a first drive transistor DX1, and afirst selection transistor SX1.

The first transmission transistor TGA operates in response to a firsttransmission control signal TS1, the first reset transistor RX1 operatesin response to a first reset control signal RS1 and the first selectiontransistor SX1 operates in response to a first selection signal SEL1.

The second readout circuit includes a second transmission transistorTGB, a second floating diffusion region FD2, a second reset transistorRX2, a second drive transistor DX2, and a second selection transistorSX2.

The second transmission transistor TUB operates in response to a secondtransmission control signal TS2, the second reset transistor RX2operates in response to a second reset control signal RS2, and thesecond selection transistor SX2 operates in response to a secondselection signal SEL2.

When activation time of the first transmission control signal TS1 andactivation time of the second transmission control signal TS2 areadequately controlled, a signal corresponding to electrical chargesgenerated by OPD and a signal corresponding to electrical chargesgenerated by R_PD may be transmitted to a column line COL according toan operation of each transistor DX1 and SX1, and DX2 and SX2.

FIG. 11 is a flowchart describing a method for manufacturing an imagesensor according to an example embodiment of the present inventiveconcept.

A method for manufacturing an image sensor in an FSI manner according toan example embodiment of the present inventive concepts will bedescribed referring to FIGS. 1 to 7, and 11.

The blue photo-electric conversion region 201, the red photo-electricconversion region 202, and a plurality of green storage regions 203,205, and 207 are formed in the semiconductor substrate 200 (S110).

The circuit part 300 is formed on or above the semiconductor substrate200 (S120).

Color filters 321 and 323 are formed on the circuit part 300 (S130).

Pixel electrodes 331, 333, and 335 which are separated from each otherare formed to partially overlap with each of the color filters 321 and323 (S140).

The photo-electric conversion region 340, made of an organic material,is formed on each pixel electrode 331, 333, and 335 (S150). The commonelectrode 350 is formed on the photo-electric conversion region 340 ofan organic material (S160).

A method for manufacturing an image sensor in a BSI manner according toan example embodiment of the present inventive concepts will bedescribed referring to FIGS. 1 to 4, 6, 7, 8, and 11.

A blue photo-electric conversion region 401, a red photo-electricconversion region 402, and a plurality of green storage regions 406,407, and 408 are formed in the semiconductor substrate 400 (S110).

The circuit part 410 is formed under the semiconductor substrate 400(S120).

The color filters 421 and 423 are formed on the semiconductor substrate400 at the opposite side of the circuit part 410 (S130).

Pixel electrodes 431, 433, and 435 are formed, which are separated fromeach other, to partially overlap with each of the color filter 421 and423 (S140).

The photo-electric conversion region 440 of an organic material isformed on each pixel electrode 431, 433, and 435 (S150).

The common electrode 450 is formed on the photo-electric conversionregion 440 of an organic material (S160).

FIG. 12 is a block diagram of an image processing device including animage sensor according to at least one of the above describedembodiments.

Referring to FIGS. 1 and 12, an image processing device 500 may beembodied in a portable electronic device, e.g., a digital camera, acamcorder, a mobile phone, a smart phone, or a tablet personal computer(PC).

The image processing device 500 includes an optical lens 503, a digitalsignal processor 600, a display 640, and an image sensor 510 accordingto at least one of the above described embodiments.

According to an example embodiment, the image processing device 500 mayor may not include the optical lens 503.

The CMOS image sensor 510 generates image data IDATA for an object 501incident through the optical lens 503.

The CMOS image sensor 510 includes a pixel array 100, a row driver 520,a timing generator 530, a correlated double sampling (CDS) block 540, acomparison block 542, and an analog-to-digital conversion (ADC) block544, a control register block 550, a ramp signal generator 560, and abuffer 570.

The pixel array 100 collectively includes the image sensor 100A, 100B,100C, and 100D described referring to FIGS. 1 to 4.

The pixel array 100 includes pixels 10 arranged in a matrix form. Asdescribed referring to FIGS. 1 to 11, the pixel array 100 includes afirst layer 100BT having a plurality of pixels R and B, and a secondlayer 100TP having a plurality of green pixels G.

The row driver 520 drives control signals (at least two of TS1, TS2, RS,RS1, RS2, SEL, SEL1, and/or SEL2) for controlling an operation of eachof the pixels 10 to the pixel array 100 according to a control of thetiming generator 530.

The timing generator 530 controls an operation of the row driver 520,the CDS block 540, the ADC block 542, and the ramp signal generator 560.

The CDS block 540 performs correlated double sampling on a pixel signalP1 to Pm, where in is a natural number, output from each of theplurality of column lines embodied in the pixel array 100.

The comparison block 542 compares each of the plurality of correlateddouble sampled pixel signals output from the CDS block 540 with a rampsignal output from the ramp signal generator 560, and outputs aplurality of comparison signals.

The ADC block 544 converts each of the comparison signals output fromthe comparison block 542 into a digital signal, and outputs a pluralityof digital signals to the buffer 570.

The control register block 550 controls an operation of the timinggenerator 530, the ramp signal generator 560, and the buffer 570according to a control of a digital signal processor 600. The buffer 570transmits image data IDATA corresponding to the plurality of digitalsignals output from the ADC block 544 to the digital signal processor600.

The digital signal processor 600 includes an image signal processor 610,a sensor controller 620, and an interface 630. The image signalprocessor 610 controls a sensor controller 620 controlling the controlregister block 550, and an interface 630.

According to an example embodiment, the CMOS image sensor 510 and thedigital signal processor 600 may be embodied in one package, e.g., amulti-chip package. According to another example embodiment, the CMOSimage sensor 510 and the image signal processor 610 may be embodied inone package, e.g., a multi-chip package.

The image signal processor 610 processes image data IDATA transmittedfrom the buffer 570, and transmits the processed image data to theinterface 630. The sensor controller 620 generates various controlsignals for controlling the control register block 550 according to acontrol of the image signal processor 610.

The interface 630 transmits image data processed by the image signalprocessor 610 to the display 640. The display 640 displays image dataoutput from the interface 630.

The display 640 may be embodied in thin film transistor-liquid crystaldisplay (TFT-LCD), a light emitting diode (LED) display, an organic LED(OLED) display, an active-matrix OLED (AMOLED) display, or a flexibledisplay.

FIG. 13 is a flowchart describing an exemplary operation of an imagesignal processor in processing and interpolating the image signalsreceived from the image sensor. According to an exemplary embodiment ofthe present inventive concept and referring to FIGS. 1 to 13, the imagesignal processor 610 performs processing twice. As an example,processing of the overlapping region 11 may yield G′=GS/4, B′=B1S/4,R′=avg(R2S/4+R1S/4), wherein G′ represents ¼ of the entire G pixel, B′is ¼ of the blue pixel B1 and R′ is the combination and average of the ¼regions of R1 and R2.

A method for acquiring a green signal GS′ and GS″ is described referringto FIGS. 2, 12, and 13. A green image signal output from eachoverlapping region 11, 12, 13, and 14 may be different from each otherdue to variations in a process, a voltage, and temperature (PVT);however, for convenience of description, it is assumed that a greenimage signal GS output from each overlapping region 11, 12, 13, and 14is the same as each other.

A first processing for output signals of each overlapping region 11, 12,13, and 14 may be performed simultaneously or at different times. Thefirst processing means generation of a blue signal and a red signal fromthe first layer and generation of a green signal from the second layer.

The second processing of the overlapping region 11 may yield G′=GS/4,B′=BIS/4, R′=avg(R2S/4+R1S/4).

The second processing, e.g., interpolation, on output signals of eachoverlapping region 11, 12, 13, and 14 may utilize known interpolationprocesses such as for Bayer, Panchromatic or EXR filters. According toexemplary embodiments of the present inventive concept, a modifiedbilinear interpolation process is utilized; further, such processing canbe performed simultaneously or at different times for the red, green,and blue signals.

FIG. 14 is a block diagram of portable electronic device including animage processing device and an image sensor according to the abovedescribed embodiments.

Referring to FIGS. 1 and 14, the image processing device 200 may beembodied in a portable electronic device which may use or support amobile industry processor interface (MIPI®) or high speed serialinterface.

The portable electronic device may be embodied in a laptop computer, apersonal digital assistant (PDA), a portable media player (PMP), amobile phone, a smart phone, a tablet personal computer (PD), or adigital camera.

The image processing device 700 includes an application processor (AP)710, an image sensor 120, and a display 730. A camera serial interface(CSI) host 713 embodied in an AP 710 may perform a serial communicationwith a CSI device 101 of the image sensor 100 through a camera serialinterface (CSI).

According to an example embodiment, a de-serializer (DES) may beembodied in the CSI host 713, and a serializer (SER) may be embodied inthe CSI device 101. The image sensor 100 may denote the image sensor100A described referring to FIGS. 1 to 6.

A display serial interface (DSI) host 711 embodied in the AP 710 mayperform a serial communication with a DSI device 731 of the display 730through a display serial interface. According to an example embodiment,a serializer (SER) may be embodied in the DSI host 711, and ade-serializer (DES) may be embodied in the DSI device 731. Each of thede-serializer (DES) and a serializer (SER) may process an electricalsignal or an optical signal.

The image processing device 700 may further include a radio frequency(RF) chip 740 which may communicate with the AP 710. A physical layer(PHY) 715 of the AP 710 may transmit or receive data to/from a PHY 741of a RE chip 740 according to MIPI DigRF.

The image processing device 700 may further include a UPS receiver 750,a memory 751 like a dynamic random access memory (DRAM), a data storagedevice 753 embodied in a non-volatile memory like a NAND flash memory, amike 755, or a speaker 757.

The image processing device 700 may communicate with an external deviceusing at least one communication protocol or communication standard,e.g., worldwide interoperability for microwave access (WiMAX) 759,Wireless LAN (WLAN) 761, ultra wideband (UWB) 763, or long termevolution (LTE™) 765. The image processing device 700 may communicatewith an external device using a Bluetooth or WiFi.

While the inventive concept has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodthat various changes in form and details may be made therein withoutdeparting from the spirit and scope of the following claims.

What is claimed is:
 1. An image sensor, comprising: a semiconductorsubstrate; a first layer including a plurality of groups of photodiodesformed in the semiconductor substrate, each of the plurality of groupsof photodiodes representing an n×m array of photodiodes, n being aninteger equal to or greater than two, m being a positive integer; and asecond layer disposed on the first layer and including a plurality oforganic photodiodes, the second layer at least partially overlapping thefirst layer, wherein each of the plurality of groups of photodiodes ofthe first layer includes a plurality of first photodiodes configured todetect light of a first wavelength, the plurality of organic photodiodesare configured to detect light of a second wavelength, and each of theplurality of organic photodiodes partially overlaps at least one amongthe plurality of first photodiodes.
 2. The image sensor of claim 1,wherein n is two.
 3. The image sensor of claim 1, wherein an overlappingarea between each of the plurality of first photodiodes and each of theplurality of organic photodiodes is the same.
 4. The image sensor ofclaim 1, wherein the plurality of organic photodiodes are skewed withrespect to the plurality of first photodiodes.
 5. The image sensor ofclaim 4, wherein the skew in alignment between the organic photodiodesand the first photodiodes is about 50% in their width and length.
 6. Theimage sensor of claim 1, further comprising: a plurality of transparentelectrodes disposed on the first layer; and a common electrode disposedon the second layer.
 7. The image sensor of claim 1, further comprising:a first photoelectric conversion region disposed in the semiconductorsubstrate and configured to perform a photoelectric conversion operationbased on the first wavelength; and a plurality of storage regionsdisposed in the semiconductor substrate and configured to perform thephotoelectric conversion operation based on the second wavelength. 8.The image sensor of claim 1, wherein the light of the second wavelengthis green.
 9. The image sensor of claim 8, wherein the light of the firstwavelength is red.
 10. The image sensor of claim 8, wherein the light ofthe first wavelength is blue.
 11. An image sensor, comprising: asemiconductor substrate; a first layer including a plurality of groupsof photodiodes formed in the semiconductor substrate, each of theplurality of groups of photodiodes representing an n×m array ofphotodiodes, n being an integer equal to or greater than two, m being apositive integer; and a plurality of transparent electrodes disposed onthe first layer; a second layer disposed on the plurality of transparentelectrodes and including an organic photodiode, the second layerpartially overlapping the first layer; and a common electrode disposedon the second layer, wherein each of the plurality of groups ofphotodiodes of the first layer includes a plurality of first photodiodesconfigured to detect light of a first wavelength, the organic photodiodeis configured to detect light of a second wavelength, and the organicphotodiode is skewed with respect to the plurality of first photodiodes.12. The image sensor of claim 11, wherein the skew in alignment betweenthe organic photodiode and the first photodiodes is about 50% in theirwidth and length.
 13. The image sensor of claim 11, wherein the light ofthe second wavelength is green.
 14. The image sensor of claim 13,wherein the light of the first wavelength is red.
 15. The image sensorof claim 13, wherein the light of the first wavelength is blue.
 16. Animage sensor, comprising: a first layer having a plurality of firstphotodiodes formed in a semiconductor substrate, the first photodiodesconfigured to detect light of a first wavelength; a second layeroverlapping the first layer, the second layer is organic, having aplurality of organic photodiodes configured to detect light of a secondwavelength, wherein the organic photodiodes are skewed with respect toalignment with the first photodiodes when viewed perpendicularly to thesemiconductor substrate; and a plurality of storage regions formed inthe semiconductor substrate, each of the storage regions correspondingto an organic photodiode configured to store electrical chargestransmitted through a corresponding metallic contact.
 17. The imagesensor of claim 16, wherein the skew in alignment between the organicphotodiodes and the first photodiodes is about 50% in their width andlength.
 18. The image sensor of claim 16, wherein the light of thesecond wavelength is green.
 19. The image sensor of claim 18, whereinthe light of the first wavelength is red.
 20. The image sensor of claim18, wherein the light of the first wavelength is blue.